Al3+-doped vanadium dioxide thin films deposited by PLD
نویسندگان
چکیده
منابع مشابه
Structural and electrical properties of In-doped vanadium oxide thin films prepared by spray pyrolysis
The In-doped vanadium pentoxide nanostructures with different doping levels including 0, 10, 20 and 30 at.% were prepared by the spray pyrolysis technique. The prepared thin films were characterized by the x-ray diffraction (XRD) and scanning electron microscopy (SEM). The XRD results revealed that the films were crystalline in tetragonal phase. Increasing the In-doping level made the structure...
متن کاملAnisotropic vanadium dioxide sculptured thin films with superior thermochromic properties
VO2 (M) STF through reduction of V2O5 STF was prepared. The results illustrate that V2O5 STF can be successfully obtained by oblique angle thermal evaporation technique. After annealing at 550 °C/3 min, the V2O5 STF deposited at 85° can be easily transformed into VO2 STF with slanted columnar structure and superior thermochromic properties. After deposition SiO2 antireflective layer, Tlum of VO...
متن کاملCathodoluminescence Study of Gadolinium–Doped Yttrium Oxide Thin Films Deposited By Radio–Frequency Magnetron Sputtering
A multi–layer gadolinium–doped yttrium oxide thin film was deposited in a combinatorial fashion on a Si (001) substrate using radio–frequency magnetron sputtering. Alternating layers of Y2O3 and Gd were deposited for a total of 9 layers. The film was homogenized in composition by an 850 C 12 hour thermal treatment producing a range of composition from Y1.96Gd0.04O3 – Y1.54Gd0.46O3 in a single f...
متن کاملGa DOPED ZnO THIN FILMS DEPOSITED BY RF MAGNETRON SPUTTERING – PREPARATION AND PROPERTIES
Gallium doped zinc oxide, GZO, thin films have been deposited onto glass substrate by rf magnetron sputtering at various substrate temperatures. The electrical and optical properties of the thin films have been studied as a function of substrate temperature. X-ray diffraction was used in order to investigate thin film structures. The thin film structure was stabilised by heating the samples in ...
متن کاملTin-doped indium oxide thin films deposited by sol–gel dip-coating technique
Indium tin oxide (ITO) thin films were prepared by the sol–gel dip-coating (SGDC) technique. The microstructure and electrical properties of ITO thin films crystallized using rapid thermal annealing (RTA) were compared with those of films prepared by classic thermal annealing (CTA). ITO thin films were successfully prepared by CTA at 500 jC for 30–60 min. At the same temperature of 500 jC and w...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Solar Energy Materials and Solar Cells
سال: 2009
ISSN: 0927-0248
DOI: 10.1016/j.solmat.2009.04.005